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PHD2N60E - PowerMOS transistors Avalanche energy rated 1.9 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET

PHD2N60E_358466.PDF Datasheet

 
Part No. PHD2N60E PHP2N60E PHB2N60E
Description PowerMOS transistors Avalanche energy rated 1.9 A, 600 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 93.93K  /  10 Page  

Maker


NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]



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Part: PHD2N60E
Maker: PHILIPS
Pack: TO-252
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  100: $0.11
1000: $0.10

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